Sample 31

Run Data

	Process	carrier	HBr	Ar	Pressure mT	RF Power	ICP power	Temp	Time (min)	Sample# Res C
7	8	Si wafer - not bonded	15	0	5.0	15	750	20	10	31.0

Post Strip Micrograph

Dektak Pre/Post Resist Strip Comparison

Total depth after etching is 9.138 um
Calculated remaining resist as 8.66um, indicating an erosion of 0.08um in 10 minutes of etching
This equates to an erosion rate of 8 nm/min
The etch depth of 0.48um in 10 mins indicates an etch rate of 48.0nm/min
The selectivity is therefore 5.77:1

	Result
Initial resist (um)	8.741000
Total depth after etch (um)	9.137800
Remaining resist (um)	8.657800
Semiconductor etched(um)	0.480000
Etch rate (nm/min)	48.000000
Erosion rate (nm/min)	8.320000
Selectivity	5.769231